SQ3427AEEV-T1_GE3
| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | -60V |
| Max Junction Temperature (Tj) | 175°C |
| Feedback Cap-Max (Crss) | 75 pF |
| Height | 1.1mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | unknown |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 5W |
| Turn On Delay Time | 8 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 24ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | -5.3A |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.095Ohm |
See Relate Datesheet
