Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G8 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 6W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 6W |
Turn On Delay Time | 19 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 22m Ω@ 13.5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 15A Tc |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Turn-Off Delay Time | 73 ns |
Continuous Drain Current (ID) | -15A |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -12V |
Max Junction Temperature (Tj) | 175°C |
Height | 1.75mm |
RoHS Status | RoHS Compliant |