SQ4153EY-T1_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 7.1W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 7.1W |
| Turn On Delay Time | 31 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 8.32m Ω @ 14A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11000pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 151nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Turn-Off Delay Time | 310 ns |
| Continuous Drain Current (ID) | -25A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.00832Ohm |
| Drain to Source Breakdown Voltage | -12V |
| Max Junction Temperature (Tj) | 175°C |
| Feedback Cap-Max (Crss) | 3600 pF |
| Height | 1.75mm |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
