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SQ4410EY-T1_GE3

Automotive N-Channel 30 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQ4410EY-T1_GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 822
  • Description: Automotive N-Channel 30 V (D-S) 175 °C MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Tc
Element Configuration Single
Power Dissipation 5W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2385pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.385nF
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
Nominal Vgs 2 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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