SQ4840EY-T1_GE3
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 7.1W Tc |
| Power Dissipation | 1.56W |
| Turn On Delay Time | 17.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2440pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Rise Time | 9.5ns |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 9.5 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 20.7A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Input Capacitance | 2.44nF |
| Drain to Source Resistance | 9mOhm |
| Rds On Max | 9 mΩ |
| Nominal Vgs | 2 V |
| Height | 1.55mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Weight | 186.993455mg |
| Operating Temperature | -55°C~175°C TJ |
See Relate Datesheet
