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SQD19P06-60L_GE3

Automotive P-Channel 60 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQD19P06-60L_GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 511
  • Description: Automotive P-Channel 60 V (D-S) 175 °C MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 46W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain to Source Resistance 46mOhm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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