SQD50N10-8M9L_GE3
| Parameters | |
|---|---|
| Fall Time (Typ) | 120 ns |
| Turn-Off Delay Time | 95 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 2V |
| Height | 2.38mm |
| Length | 6.22mm |
| Width | 6.73mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | 1.437803g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Power Dissipation-Max | 136W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.9m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
See Relate Datesheet
