banner_page

SQJ158EP-T1_GE3

Automotive N-Channel 60 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQJ158EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 409
  • Description: Automotive N-Channel 60 V (D-S) 175 °C MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.033Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 80A
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good