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SQJ457EP-T1_GE3

MOSFET P-CH 60V 36A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQJ457EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 879
  • Description: MOSFET P-CH 60V 36A POWERPAKSO-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 68W Tc
Power Dissipation 68W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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