SQJ469EP-T1_GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 100W Tc |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Turn On Delay Time | 16 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10.2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 32A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 150 ns |
| Continuous Drain Current (ID) | -32A |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -80V |
| Input Capacitance | 5.1nF |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 45mOhm |
| Rds On Max | 25 mΩ |
| Nominal Vgs | -2 V |
| Height | 1.267mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
