SQJ848EP-T1_GE3
| Parameters | |
|---|---|
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 47A |
| Factory Lead Time | 1 Week |
| Drain-source On Resistance-Max | 0.009Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Mount | Surface Mount |
| Nominal Vgs | 2 V |
| Mounting Type | Surface Mount |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 68W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 68W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 10.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 47A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 17 ns |
See Relate Datesheet
