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SQJA70EP-T1_GE3

MOSFET N-CH 100V 14.7A SO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQJA70EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 308
  • Description: MOSFET N-CH 100V 14.7A SO-8 (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 95m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.7A Tc
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 14.7A
Drain-source On Resistance-Max 0.208Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 5 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 27W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
See Relate Datesheet

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