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SQM50028EM_GE3

Automotive N-Channel 60 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQM50028EM_GE3
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 624
  • Description: Automotive N-Channel 60 V (D-S) 175 °C MOSFET (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Supplier Device Package TO-263-7
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 375W Tc
Power Dissipation 375W
Turn On Delay Time 48 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 1.63mOhm
Height 5.08mm
RoHS Status RoHS Compliant
See Relate Datesheet

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