SQV120N06-4M7L_GE3
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.7m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0047Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 300A |
| Avalanche Energy Rating (Eas) | 320 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 14.86mm |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
See Relate Datesheet
