Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Weight | 240mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 1W |
Terminal Position | BOTTOM |
Current Rating | 1.5A |
Frequency | 100MHz |
Base Part Number | SS8050 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 1.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 190MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 60V |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 85 |
Height | 4.58mm |
Length | 4.58mm |
Width | 3.86mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |