Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3 Flat Leads |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Digi-Reel® |
Published | 2009 |
Series | U-MOSVI |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 32 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 29.8m Ω @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±8V |
Turn-Off Delay Time | 107 ns |
Continuous Drain Current (ID) | 6A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 6A |
Drain-source On Resistance-Max | 0.0298Ohm |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 24A |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |