SSN1N45BTA
| Parameters | |
|---|---|
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 500mA |
| Gate to Source Voltage (Vgs) | 50V |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Drain to Source Breakdown Voltage | 450V |
| Feedback Cap-Max (Crss) | 8.5 pF |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 450V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Current Rating | 500mA |
| Number of Elements | 1 |
| Power Dissipation-Max | 900mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 900mW |
| Turn On Delay Time | 7.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.25 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
| Rise Time | 21ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±50V |
| Fall Time (Typ) | 21 ns |
See Relate Datesheet
