Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 80V |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 300mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | STA28 |
Pin Count | 3 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 200mW |
Transistor Application | AMPLIFIER |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 300mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 200MHz |
Max Breakdown Voltage | 80V |
Frequency - Transition | 200MHz |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 12V |
hFE Min | 10000 |
VCEsat-Max | 1.5 V |
Collector-Base Capacitance-Max | 8pF |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |