Parameters | |
---|---|
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 60V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | 10-SIP |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 1999 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 10 |
ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 |
Max Power Dissipation | 4W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 10 |
JESD-30 Code | R-PSIP-T10 |
Qualification Status | Not Qualified |
Number of Elements | 4 |
Configuration | 2 BANKS, COMMON EMITTER, 2 ELEMENTS |
Power - Max | 4W |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN AND PNP |
Transistor Type | 2 NPN, 2 PNP (H-Bridge) |
Collector Emitter Voltage (VCEO) | 1V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A 4V |
Current - Collector Cutoff (Max) | 100μA ICBO |