STB10NK60ZT4
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Threshold Voltage | 3.75V |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | SuperMESH™ |
| JESD-609 Code | e3 |
| Gate to Source Voltage (Vgs) | 30V |
| Part Status | Not For New Designs |
| Drain to Source Breakdown Voltage | 600V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Dual Supply Voltage | 600V |
| Termination | SMD/SMT |
| Nominal Vgs | 3.75 V |
| ECCN Code | EAR99 |
| Resistance | 750mOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Height | 4.6mm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Length | 10.4mm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Width | 9.35mm |
| Peak Reflow Temperature (Cel) | 245 |
| Radiation Hardening | No |
| Current Rating | 10A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Base Part Number | STB10N |
| Pin Count | 4 |
| Lead Free | Lead Free |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 115W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 115W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 30 ns |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Turn-Off Delay Time | 55 ns |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Continuous Drain Current (ID) | 4.5A |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
See Relate Datesheet
