Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 550mOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 400V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 9A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STB11N |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 110W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 110W |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 550m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 4.5A |
Threshold Voltage | 3.75V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 9A |
Drain to Source Breakdown Voltage | 400V |
Height | 4.6mm |
Length | 10.75mm |
Width | 10.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |