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STB13N80K5

STB13N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB13N80K5
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 573
  • Description: STB13N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 48A
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 450mOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STB13N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 6A, 10V
See Relate Datesheet

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