Parameters | |
---|---|
Width | 10.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | D2PAK-0079457 |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Series | MDmesh™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 165MOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STB26N |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 140W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 140W |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 165m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 85 ns |
Continuous Drain Current (ID) | 20A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 80A |
Max Junction Temperature (Tj) | 150°C |
Height | 4.83mm |
Length | 10.75mm |