Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Series | MDmesh™ M2 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Base Part Number | STB33N |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 190W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 13.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 140m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1790pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 24A Tc |
Gate Charge (Qg) (Max) @ Vgs | 41.5nC @ 10V |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Turn-Off Delay Time | 72.5 ns |
Continuous Drain Current (ID) | 24A |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.14Ohm |
Pulsed Drain Current-Max (IDM) | 96A |
DS Breakdown Voltage-Min | 650V |
Avalanche Energy Rating (Eas) | 780 mJ |
Height | 4.6mm |
Length | 10.4mm |
Width | 9.35mm |
RoHS Status | ROHS3 Compliant |