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STB34NM60N

STMICROELECTRONICS STB34NM60N Power MOSFET, N Channel, 29 A, 600 V, 0.092 ohm, 10 V, 3 V


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB34NM60N
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 759
  • Description: STMICROELECTRONICS STB34NM60N Power MOSFET, N Channel, 29 A, 600 V, 0.092 ohm, 10 V, 3 V (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series MDmesh™ II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STB34N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 29A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.105Ohm
Pulsed Drain Current-Max (IDM) 126A
DS Breakdown Voltage-Min 600V
Nominal Vgs 3 V
Height 4.6mm
Length 10.75mm
Width 10.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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