Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | D2PAK-0079457-A2 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | Automotive, AEC-Q101, MDmesh™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | STB43N |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 250W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 250W |
Case Connection | DRAIN |
Turn On Delay Time | 73 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 63m Ω @ 21A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 42A |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.063Ohm |
Drain to Source Breakdown Voltage | 650V |
Avalanche Energy Rating (Eas) | 650 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 4.83mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |