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STB5N62K3

Trans MOSFET N-CH 620V 4.2A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB5N62K3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 188
  • Description: Trans MOSFET N-CH 620V 4.2A 3-Pin(2+Tab) D2PAK T/R (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.6Ohm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA LOW-ON RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number STB5N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.2A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Nominal Vgs 3.75 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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