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STB6N60M2

Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB6N60M2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 335
  • Description: Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R (Kg)

Details

Tags

Parameters
Turn On Delay Time 9.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 232pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 7.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 22.5 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Height 9.35mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 1.2Ohm
Technology MOSFET (Metal Oxide)
Base Part Number STB6N
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
See Relate Datesheet

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