Parameters | |
---|---|
Number of Elements | 1 |
Power Dissipation-Max | 110W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 110W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.2 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 905pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Rise Time | 14ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 19 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 6A |
Threshold Voltage | 3.75V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 6A |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 24A |
Height | 4.6mm |
Length | 10.75mm |
Width | 10.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 245 |
Current Rating | 6A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STB6N |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |