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STB7ANM60N

MOSFET N-CH 600V 5A 0.84Ohm MDmesh II


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB7ANM60N
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 747
  • Description: MOSFET N-CH 600V 5A 0.84Ohm MDmesh II (Kg)

Details

Tags

Parameters
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, MDmesh™ II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STB7AN
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
See Relate Datesheet

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