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STB7NK80Z-1

MOSFET N-CH 800V 5.2A I2PAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STB7NK80Z-1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 556
  • Description: MOSFET N-CH 800V 5.2A I2PAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STB7N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1138pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 20.8A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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