Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-5 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2006 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Max Power Dissipation | 160W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 5 |
JESD-30 Code | R-PSFM-T4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Power - Max | 160W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 2V |
Max Collector Current | 15A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 10A 4V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 2V @ 10mA, 10A |
Collector Emitter Breakdown Voltage | 160V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |