Parameters | |
---|---|
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 35mOhm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 25A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STD25N |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 100V |
Power Dissipation-Max | 100W Tc |
Element Configuration | Single |
Current | 17A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 100W |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 35m Ω @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1710pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 25A Tc |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 5V |
Rise Time | 40ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 58 ns |
Continuous Drain Current (ID) | 25A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 100V |
Avalanche Energy Rating (Eas) | 450 mJ |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 2.5 V |
Height | 2.63mm |
Length | 6.6mm |
Width | 6.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Cut Tape (CT) |
Series | STripFET™ II |