STD2HNK60Z
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Rds On (Max) @ Id, Vgs | 4.8 Ω @ 1A, 10V |
| Mount | Surface Mount |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2A Tc |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 30ns |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Fall Time (Typ) | 50 ns |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 2A |
| JESD-609 Code | e3 |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 30V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Number of Terminations | 2 |
| Pulsed Drain Current-Max (IDM) | 8A |
| ECCN Code | EAR99 |
| Radiation Hardening | No |
| Resistance | 4.8Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STD2HNK |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 45W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 1 Week |
See Relate Datesheet
