Parameters | |
---|---|
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 8.5Ohm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Base Part Number | STD2N |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 70W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 70W |
Turn On Delay Time | 7.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5 Ω @ 900mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 499pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.85A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Drain to Source Voltage (Vdss) | 1000V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Turn-Off Delay Time | 41.5 ns |
Continuous Drain Current (ID) | 1.85A |
Threshold Voltage | 3.75V |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 2A |
Drain to Source Breakdown Voltage | 1kV |
Pulsed Drain Current-Max (IDM) | 7.4A |
Height | 2.4mm |
Length | 6.6mm |
Width | 6.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | SuperMESH™ |