Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | SuperMESH™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 6.5Ohm |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STD2N |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 70W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 70W |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.5 Ω @ 1.05A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2.1A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 40 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 2.1A |
Threshold Voltage | 3.75V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 900V |
Pulsed Drain Current-Max (IDM) | 8.4A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |