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STD3LN62K3

Trans MOSFET N-CH 620V 2.5A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STD3LN62K3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 490
  • Description: Trans MOSFET N-CH 620V 2.5A 3-Pin(2+Tab) DPAK T/R (Kg)

Details

Tags

Parameters
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3Ohm
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD3L
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 90 mJ
Height 2.4mm
Length 6.6mm
Width 6.2mm
See Relate Datesheet

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