Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STD5N |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 33W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 33W |
Case Connection | DRAIN |
Turn On Delay Time | 11.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 700m Ω @ 2.5A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 242pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
Rise Time | 21.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15.5 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 5A |
Threshold Voltage | 2.5V |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Gate to Source Voltage (Vgs) | 20V |
Mount | Surface Mount |
Drain Current-Max (Abs) (ID) | 5A |
Mounting Type | Surface Mount |
Drain to Source Breakdown Voltage | 200V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Pulsed Drain Current-Max (IDM) | 20A |
Number of Pins | 3 |
Dual Supply Voltage | 200V |
Max Junction Temperature (Tj) | 150°C |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Nominal Vgs | 2.5 V |
Packaging | Tape & Reel (TR) |
Height | 2.63mm |
Series | STripFET™ |
Length | 6.6mm |
JESD-609 Code | e3 |
Width | 6.2mm |
Part Status | Active |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS Status | ROHS3 Compliant |
Number of Terminations | 2 |
Lead Free | Lead Free |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 700mOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |