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STD5N62K3

MOSFET N-CH 620V 4.2A DPAK


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STD5N62K3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 864
  • Description: MOSFET N-CH 620V 4.2A DPAK (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.6Ohm
Additional Feature ULTRA LOW-ON RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD5N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.2A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 620V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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