Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Base Part Number | STD5N |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 60W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.75 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 177pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
Drain to Source Voltage (Vdss) | 800V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Drain Current-Max (Abs) (ID) | 4A |
Pulsed Drain Current-Max (IDM) | 16A |
DS Breakdown Voltage-Min | 800V |
Avalanche Energy Rating (Eas) | 165 mJ |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | MDmesh™ |
Part Status | Active |