STD60NF55LAT4
| Parameters | |
|---|---|
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 110W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 5V |
| Rise Time | 180ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 15V |
| Pulsed Drain Current-Max (IDM) | 240A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 400 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, SuperFET® II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Additional Feature | LOW THRESHOLD |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STD60N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
See Relate Datesheet
