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STD6N52K3

Trans MOSFET N-CH 525V 5A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STD6N52K3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 991
  • Description: Trans MOSFET N-CH 525V 5A 3-Pin(2+Tab) DPAK T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.2Ohm
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Base Part Number STD6N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 70W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 5A Tc
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 525V
Pulsed Drain Current-Max (IDM) 20A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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