Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Series | SuperMESH5™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 1.25Ohm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STD6N |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 90W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 90W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.25 Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 33 ns |
Continuous Drain Current (ID) | 9A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 9A |
Drain to Source Breakdown Voltage | 950V |
Avalanche Energy Rating (Eas) | 90 mJ |
Nominal Vgs | 4 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |