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STD7N52DK3

MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STD7N52DK3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 660
  • Description: MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series SuperFREDmesh3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.15Ohm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD7
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.15 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 525V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 620V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 100 mJ
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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