Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | MDmesh™ II |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 780mOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | STD7 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 45W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 45W |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 780m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 2.5A |
Gate to Source Voltage (Vgs) | 25V |
Drain Current-Max (Abs) (ID) | 5A |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 20A |
Avalanche Energy Rating (Eas) | 100 mJ |
Nominal Vgs | 3 V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |