Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Series | STripFET™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 420MOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Base Part Number | STD8N |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 72W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 72W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 420m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Rise Time | 10ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 26 ns |
Continuous Drain Current (ID) | 8A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 8A |
Drain to Source Breakdown Voltage | 250V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |