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STD9N60M2

STD9N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STD9N60M2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 904
  • Description: STD9N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

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Parameters
Fall Time (Typ) 13.5 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 2
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 780mOhm
Technology MOSFET (Metal Oxide)
Base Part Number STD9N
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 8.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 780m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 7.5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
See Relate Datesheet

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