Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | STripFET™ II |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 10mOhm |
Terminal Finish | Nickel (Ni) |
Additional Feature | AVALANCHE ENERGY RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | STE1 |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 500W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500W |
Case Connection | ISOLATED |
Turn On Delay Time | 232 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12m Ω @ 70A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 11100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 140A Tc |
Gate Charge (Qg) (Max) @ Vgs | 338nC @ 10V |
Rise Time | 218ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 250 ns |
Turn-Off Delay Time | 283 ns |
Continuous Drain Current (ID) | 140A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 560A |
Avalanche Energy Rating (Eas) | 800 mJ |
Nominal Vgs | 3 V |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |