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STF13NK50Z

STF13NK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Nocochips NO: 761-STF13NK50Z
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 165
  • Description: STF13NK50Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF13
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 6.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.48Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 44A
Dual Supply Voltage 500V
Avalanche Energy Rating (Eas) 240 mJ
Nominal Vgs 3.75 V
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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