Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | MDmesh™ II |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 285MOhm |
Terminal Finish | Matte Tin (Sn) - annealed |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | STF18 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 30W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 30W |
Case Connection | ISOLATED |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 285m Ω @ 6.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 13A Tc |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 40 ns |
Turn-Off Delay Time | 50 ns |
Continuous Drain Current (ID) | 13A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 52A |
Height | 16.4mm |
Length | 10.4mm |
Width | 4.6mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |